Udhiarto, Arief and Purwiyanti, Sri and Moraru, Daniel and Mizuno, Takeshi and Tabe, Michiharu (2013) Observation of nanosize effect in lateral nanoscale p-n and p-i-n junctions. 2013 International Conference on QIR (Quality in Research).


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We study nanosize-effect in lateral nanoscale p-n and p-i-n junction devices under light illumination. Current versus voltage (I-V) and current versus time (I-time) characteristics were investigated at low and at room temperature. At low temperature, only p-n junction devices show a photon sensitivity in I-V characteristics due to co-existence of donor acceptor pair. At room temperature, both devices show photovoltaic nature, i.e., increase of reverse current is observed under light illumination. In addition, devices with narrow channel-width tend to produce larger photocurrent which is ascribed to the nanosize effect.

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Fakultas Teknik (FT) > Prodi Teknik Elektro
Depositing User: Dr. Sri Purwiyanti
Date Deposited: 28 May 2018 03:41
Last Modified: 28 May 2018 03:41
URI: http://repository.lppm.unila.ac.id/id/eprint/6872

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