Purwiyanti, Sri and Udhiarto, Arief and Moraru, Daniel and Mizuno, Takeshi and Hartanto, Djoko and Tabe, Michiharu (2014) Observation of Tunneling Effects in Lateral Nanowire pn Junctions. Makara Journal of Technology, 18 (2). pp. 91-95. ISSN 2355-2786


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As electronic device dimensions are continuously reduced, applied bias conditions significantly change and the transport mechanisms must be reconsidered. Tunneling devices are promising for scaled-down electronics because of expected high-speed operation and relatively low bias. In this work, we investigated the tunneling features in silicon-on-insulator lateral nanowire pn junction and pin junction devices. By controlling the substrate voltage, tunneling features can be observed in the electrical characteristics. We found that the minimum substrate voltage required for tunneling to occur in pn junctions is higher as compared with pin junctions. The main cause of these effects relies in the difference between the doping profiles, since the pn junctions contain a co-doped region, while the pin junctions contain an i-layer.

Item Type: Article
Uncontrolled Keywords: nanowire, pn junction, silicon, tunneling
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Fakultas Teknik (FT) > Prodi Teknik Elektro
Depositing User: Dr. Sri Purwiyanti
Date Deposited: 28 May 2018 03:36
Last Modified: 28 May 2018 03:36
URI: http://repository.lppm.unila.ac.id/id/eprint/6866

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