Udhiarto, Arief and Moraru, Daniel and Purwiyanti, Sri and Kuzuya, Yohei and Mizuno, Takeshi and Mizuta, Hioshi and Tabe, Michiharu (2012) Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor–Acceptor Pair in Nanoscale Si p–n Junctions. Applied Physics Express, 5 (112201). 112201-1-112201-3. ISSN 1882-0786

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Official URL: http://iopscience.iop.org/article/10.1143/APEX.5.1...

Abstract

We study the photoresponse of Si nanoscale p–n and p–i–n diodes. As a result, we find a photon-sensitive multilevel random telegraph signal(RTS) in p–n diodes, but not in p–i–n diodes. From this fact and analysis of current jumps in the RTS, the multilevel RTS is ascribed to single photocarrier charging and discharging in a donor–acceptor pair in the depletion region. Thus, it is found that a donor–acceptor pair plays an important role in p–n junctions, while, according to our previous report, a single donor (acceptor) works as an electron (hole) trap in junctionless field-effect transistors. # 2012 The Japan Society of Applied Physics

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Fakultas Teknik (FT) > Prodi Teknik Elektro
Depositing User: Dr. Sri Purwiyanti
Date Deposited: 25 Apr 2018 08:05
Last Modified: 25 Apr 2018 08:05
URI: http://repository.lppm.unila.ac.id/id/eprint/6725

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