Purwiyanti, Sri and Nuryadi, Ratno and Hartanto, Djoko (2011) SIMULATION OF MINI-BAND FORMATION IN TRIPLE SI QUANTUM WELLS BASED RESONANT TUNNELING DIODE. TENCON 2011-2011 IEEE Region 10 Conference. pp. 756-759. ISSN 2159-3450

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Abstract

In this work, we investigate the formation of mini-band energy in triple Si quantum wells-based resonance tunnelling diode focusing on the effect of applied bias on the band. The formation of mini-bands is obtained from the calculation of electron tunnelling probability through the wells. The calculation is done based on transfer matrix method. The simulation results show the mini-band formation due to the appearance of discrete energy group. The changes of applied bias, quantum well width and barrier thickness causes the change of the mini-band width. These results indicate that the device structure and applied bias condition play a key role on the formation of mini-band energy in the quantum wells.

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Fakultas Teknik (FT) > Prodi Teknik Elektro
Depositing User: Dr. Sri Purwiyanti
Date Deposited: 28 May 2018 03:41
Last Modified: 28 May 2018 03:41
URI: http://repository.lppm.unila.ac.id/id/eprint/6873

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