Sapteka, A.A.Ngurah gde and Tan, Hoang Nat and Unno, Ryosuke and Moraru, Daniel and Udhiarto, Arief and Purwiyanti, Sri and Tabe, Michiharu and Hartanto, Djoko and Sudibyo, Harry (2015) LINEAR I-V CHARACTERISTICS OF HIGHLY-DOPED SOI P-I-N DIODE FOR LOW TEMPERATURE MEASUREMENT. International Journal of Technology, 3. pp. 318-326. ISSN 2086-9614
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Abstract
This report is focused on the linear region of I-V characteristics of nanoscale highly-doped p-i-n diodes fabricated within ultrathin silicon-on-insulator (SOI) structures with an intrinsic layer length of 200 nm and 700 nm under a forward bias at a temperature range from 50 K to 250 K. The doping concentrations of Boron and Phosphorus in SOI p-i-n diodes are high, 1×1020 cm-3 and 2×1020 cm-3, respectively. The linearity of I-V characteristics of the p-i-n diodes under a certain forward bias voltage range and temperature range from 50 K to 250 K indicate these devices are suitable for low temperature sensing purposes. We conclude that highly-doped p-i-n diodes produce a higher current as the temperature decreases under a certain bias voltage range. Nanoscale diodes with longer and wider intrinsic layers generate higher currents under a certain range of bias voltage and low temperature measurements.
| Item Type: | Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Fakultas Teknik (FT) > Prodi Teknik Elektro |
| Depositing User: | Dr. Sri Purwiyanti |
| Date Deposited: | 28 May 2018 03:41 |
| Last Modified: | 28 May 2018 03:41 |
| URI: | http://repository.lppm.unila.ac.id/id/eprint/6869 |
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