Nowak, Roland and Moraru, Daniel and Mizuno, Takeshi and Hartanto, Djoko and Jablonski, Ryszard and Tabe, Michiharu (2013) Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes at low temperatures. APPLIED PHYSICS LETTERS, 103. 243102-1-243102-4. ISSN 0003-6951

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Abstract

We studied current-voltage characteristics of nanoscale pn diodes having the junction formed in a laterally patterned ultrathin silicon-on-insulator layer. At temperatures below 30 K, we observed random telegraph signal (RTS) in a range of forward bias. Since RTS is observed only for pn diodes, but not for pin diodes, one dopant among phosphorus donors or boron acceptors facing across the junction is likely responsible for potential changes affecting the current. Based also on potential measurements by low-temperature Kelvin probe force microscope, RTS is ascribed to trapping/detrapping of carriers by/from a single dopant near the farther edge of the depletion region.

Item Type:	Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Fakultas Teknik (FT) > Prodi Teknik Elektro
Depositing User:	Dr. Sri Purwiyanti
Date Deposited:	25 Apr 2018 08:05
Last Modified:	25 Apr 2018 08:05
URI:	http://repository.lppm.unila.ac.id/id/eprint/6724

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• Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes at low temperatures. (deposited 25 Apr 2018 08:05) [Currently Displayed]
  • Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes at low temperatures. (deposited 25 Apr 2018 08:02)

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