Purwiyanti, Sri and Tan, Hoang Nat and Moraru, Daniel and Anh, Lee The and Manoharan, M. and Mizuno, Takeshi and Mizuta, Hioshi and Hartanto, Djoko and Tabe, Michiharu (2014) Study of Quantized-Energy Effects in Si Nanoscale Lateral pn Junction Diodes. 2014 IEEE Silicon Nanowlwctronics Workshop.

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Official URL: https://ieeexplore.ieee.org/document/7348593

Abstract

In this work, we study SOI nanoscale pn junctions and find that transport characteristics are strongly affected by states of individual dopants and by quantized energy states. For pn diodes with lower doping concentration, we find that individual dopant atoms work as electron traps, inducing RTS in the diode current. On the other hand, for highlydoped pn diodes, quantization effects play critical roles in transport characteristics for both forward and reverse bias regimes.

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Fakultas Teknik (FT) > Prodi Teknik Elektro
Depositing User: Dr. Sri Purwiyanti
Date Deposited: 29 Jan 2019 04:19
Last Modified: 29 Jan 2019 04:19
URI: http://repository.lppm.unila.ac.id/id/eprint/10531

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