Tan, Hoang Nat and Moraru, Daniel and Tyszka, K. and Sapteka, A.A.Ngurah gde and Purwiyanti, Sri and Anh, Le The and Manoharan, M. and Mizuno, Takeshi and Jablonski, Ryszard and Hartanto, Djoko and Mizuta, Hioshi and Tabe, Michiharu (2015) Dopant-Assisted Tunnel-Current Enhancement in Two-Dimensional Esaki Diodes. Proceeding 2015 Silicon Nanoelectronics Workshop (SNW).

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We study ultrathin (2D) lateral Si Esaki tunneling diodes, and find that anomalous current peaks and humps are observed to be superimposed on the ordinary negative differential conductance (NDC). The remarkable enhancement of interband tunneling current is primarily ascribed to resonant tunneling via gap-states created by large potential fluctuation due to prominent inhomogeneity of dopant distribution (dopantclusters) in the 2D depletion region.

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Fakultas Teknik (FT) > Prodi Teknik Elektro
Depositing User: Dr. Sri Purwiyanti
Date Deposited: 29 Jan 2019 04:19
Last Modified: 29 Jan 2019 04:19
URI: http://repository.lppm.unila.ac.id/id/eprint/10530

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